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College of Electrical & Mechanical Engineering  (CEME)
Dr Faisal Ahmed
Assistant Professor
Department of Mechanical Engineering

CE&ME
National University of Sciences and Technology (NUST)
Islamabad
Tel : +92-51-54444320

Specialization
Nanomaterials

Education
PhD. (Mechanical Engineering), Sungkyunkwan University, South Korea

The research interests of Dr. Faisal Ahmed are garnered towards the mechanical, thermal, optical and electrical characterization of nanoelectronic materials. He possesses extensive experience of nano/microstructure fabrication and material characterization techniques namely Electron beam lithography, Photolithography, Electron beam deposition, Raman spectroscopy, Atomic force microscopy and Scanning electron microscopy. He has been serving as Assistant Professor in Department of Mechanical Engineering, CEME since August 2018.

​Nano/Micro Fabrication. Thermal, Optical and Electrical Characterisation of Nanomaterials based Electronic Devices.

​1)    F. Ahmed, M. S. Choi, X. Liu and W. J. Yoo., Carrier transport at the metal–MoS2 interface., Nanoscale, 7, 9222-9228 (2015). Impact Factor = 7.36

2)    D. Qu, X. Liu, F. Ahmed, D. Lee and W. J. Yoo., Self-screened high performance multi-layer MoS2 transistor formed by using a bottom graphene electrode., Nanoscale, 7, 19273-19281 (2015). Impact Factor = 7.36

3)    X. Liu, D. Qu, J. Ryu, F. Ahmed, Z. Yang, D. Lee and W. J. Yoo., P‐Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor., Adv. Mater., 28, 2345-2351 (2016). Impact Factor = 19.79

4)    F. Ahmed, Y. D. Kim, M. S. Choi, X. Liu, D. Qu, Z. Yang, J. Hu, I. P. Herman, J. Hone and W. J. Yoo., High electric field carrier transport and power dissipation in multilayer black phosphorus field effect transistor with dielectric engineering., Adv. Funct. Mater., 27, 1604025 (2016).Impact Factor = 13.32

5)    C. Kim, I. Moon, D. Lee, M. S. Choi, F. Ahmed, S. Nam, Y. Cho, H.-J. Shin, S. Park and W. J. Yoo., Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides., ACS Nano, 11, 1588-1596 (2017). Impact Factor = 13.94

6)    D. Qu, X. Liu, M. Huang, C. Lee, F. Ahmed, H. Kim, R. S. Ruoff, J. Hone and W. J. Yoo., Carrier type Modulation and mobility improvement of thin MoTe2., Adv. Mater., 29, 1606433 (2017). Impact Factor = 19.79

7)    X. Liu, D. Qu, H.-M. Li, I. Moon, F. Ahmed, C. Kim, M. Lee, Y. Choi, J. H. Cho, J. Hone and W. J. Yoo., Modulation of Quantum Tunneling via a vertical two-dimensional Black Phosphorus and Molybdenum Disulfide P-N Junction., ACS Nano, 11, 9143-9150 (2017). Impact Factor = 13.94

8)    F. Ahmed, Y. D. Kim, Z. Yang, P. He, E. Hwang, H. Yang, J. Hone and W. J. Yoo., Impact ionization by hot carriers in a black phosphorus field effect transistor. Nature Communications., 9, 3414 (2018) Impact Factor = 12.12

*Reported by Korean print and electronic media.

http://www.anewsa.com/detail.php?number=1362230

9)    F. Ahmed, S. Heo, Y. Zheng, F. Ali, C. Ra, H.-I. Lee, T. Taniguichi, J. Hone, B. H. Lee and W. J. Yoo., Dielectric dispersion and high field response of two-dimensional hexagonal boron nitride. Adv. Funct. Mater., 1804235 (2018) Impact Factor = 13.32

10)      F. Ali, F. Ahmed, Y. Zheng, I. Moon, M.J. Lee, Y. Hassan, C. Lee, and W. J. Yoo., Dielectric dispersion and high field response of two-dimensional hexagonal boron nitride. Adv. Mater. Interfaces, 1801528 (2018) Impact Factor = 4.834

11)     F. Ahmed, B. A. Ahmed and A. S. Hakeem. Joule hating in two-dimensional materials-based transistor. Res Dev Material Sci, 10, 4 (2019) Invited Mini Review.

12)    U. Perwez, I. Aziz, F. Ahmed and M. R. Khan. Numerical Investigation of Design and Operating Parameters of Thermal Gradient Continuous-Flow PCR Microreactor: A Step towards Device Miniaturization. Processes, (2019). Impact Factor = 1.963

CONFERENCE PROCEEDINGS/ SYMPOSIUMS:

1)    F. Ahmed, M. S. Choi, X. Liu, S. Kim, J. Ryu and W. J. Yoo., Mechanism of carrier transport transition across metal-MoS2 interface. The 3rd International Symposium on Hybrid Materials and Processing, HYMAP 2014, Busan, Korea. 11~13 Nov 2014.

2)    F. Ahmed, M. S. Choi, X. Liu and W. J. Yoo., Spotting nature of carrier transport across metal-MoS2 interface. Korean Physics Society, 2015 spring meeting, Daejong, Korea. April 2015

3)    F. Ahmed, M. S. Choi, D. Lee and W. J. Yoo., Power dissipation and management in black Phosphorus field effect transistor. Nano Korea International nanotech Symposium & Nano-convergence Expo, Gyeonggi-do Korea. July 2016.

4)    F. Ahmed, M. S. Choi, X. Liu, D. Qu, D. Lee and W. J. Yoo., Power Dissipation Study in Multilayer Black Phosphorus Field Effect Transistor via Electrical Breakdown. 8th International Conference of Recent Progress in Graphene/2D Research, Sungkyunkwan University, Seoul, Korea. Sept 2016

5)    F. Ahmed, M. S. Choi, X. Liu and W. J. Yoo., Power Dissipation and corresponding Cooling in Black Phosphorus Field Effect Transistor. Korean Physical Society, 2016 Fall meeting Gwangju. Oct. 2016.

6)    F. Ahmed, M.S. Choi, Y. D. Kim, J. Hone and W. J. Yoo. High Electrical Field Transport in Black Phosphorus Field Effect Transistor. 7th Edition of Graphene Conference, March 2017 Barcelona Spain. March 2017.

7)    F. Ahmed, M.S. Choi, Y. D. Kim, J. Hone and W. J. Yoo. Super-linear behavior in Black Phosphorus Field Effect Transistor. Nano Korea 2017 Symposium & Nano-convergence Expo, Ilsan, Korea. July 2017.

8)    F. Ahmed, Y. D. Kim, P. He, H. Yang, J. Hone and W. J. Yoo. Study of High Electric Field Breakdown Thermometry in Black Phosphorus Field Effect Transistor. 8th International Conference of Recent Progress in Graphene/2D Research, Singapore. Sept 2017.

9)    F. Ahmed, M.S. Choi, Y. D. Kim, J. Hone and W. J. Yoo. Energy Dissipation in multilayer Black Phosphorus Field Effect Transistor. The 4th International Symposium on Hybrid Materials and Processing, HYMAP 2017, Busan, Korea. Nov 2017.

10)   B.A. Ahmed, F. Ahmed, K. Ali, J. B. Shabbir, Development and Characterization of Alumina Based Membranes for Water Purification, 8th International Conference on Nano and Materials Science, ICNMS 2020, January 17-20 (2020), Seattle USA.

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